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ASML High‑NA EUV：晶片製造下一個關鍵飛躍

High‑NA EUV把數值孔徑由0.33提升到0.55，可印出更細晶片結構並減少多重曝光流程，為1.4nm級節點鋪路。[2][7] Intel、Samsung同SK hynix屬最早部署公司，而TSMC對大規模導入相對審慎。[2][7] 每部High‑NA EUV設備成本約3.5億美元，但可能透過減少工序與提升良率抵銷部分成本。[4]

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1.5M0

Illustration of ASML High‑NA EUV lithography machine used in advanced semiconductor manufacturing — How is ASML’s new High-NA EUV lithography technology changing chip manufacturing, when will the first chips made with these machines arrive,High‑NA EUV lithography systems raise numerical aperture to 0.55, enabling smaller chip features and fewer patterning steps in next‑generation semiconductor nodes.
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Create a landscape editorial hero image for this Studio Global article: How is ASML’s new High-NA EUV lithography technology changing chip manufacturing, when will the first chips made with these machines arrive,. Article summary: ASML’s High-NA EUV is the next major lithography step: it lets chipmakers print smaller features with fewer patterning steps, improving density, process simplicity, and potentially yield at future 1.4 nm-class nodes. The. Topic tags: general, general web. Reference image context from search candidates: Reference image 1: visual subject "A group of six scientists or engineers in white suits and safety glasses stand in front of a large, complex piece of quantum or lithography equipment inside a cleanroom facility, w" Reference image 2: visual subject "A highly advanced, automated lithography system with complex mechanical and electronic components designed for ut
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ASML推出嘅 High‑NA EUV（高數值孔徑極紫外光刻） 被視為晶片製造技術嘅下一個重大里程碑。透過提升EUV掃描機嘅光學解析度，晶片廠可以喺矽晶圓上印出更細嘅電晶體與互連結構，而且需要嘅製程步驟更少。當業界逐步邁向 1.4 nm 等級節點 時，呢種能力變得非常關鍵。

目前第一批設備已經開始交付，最早利用呢類機器製造嘅晶片，預計會喺 2025–2026 年 出現小規模生產。不過真正大規模量產，可能要再過幾年先會全面展開。

High‑NA EUV 為晶片製造帶來咩改變

現時主流 EUV 光刻機嘅數值孔徑（Numerical Aperture, NA）係 0.33。High‑NA EUV 將呢個數值提升到 0.55，令設備可以分辨更細微嘅圖案。

對晶片製造商嚟講，呢點好重要。隨住先進製程持續縮小，電晶體與金屬互連嘅尺寸變得極細。傳統 EUV 通常需要透過 多重曝光（multi‑patterning） 才能達到目標尺寸，但 High‑NA 可以喺更少曝光次數之下完成圖案化，令製程流程簡化。

業界估計，高‑NA 系統可以喺一次曝光中印出 約 8 nm 嘅結構，而現有 EUV 約為 13 nm。實際可用尺寸仍然取決於光阻材料、光罩設計以及晶片架構等因素。

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