The chip is fabricated using the 1c DRAM process node, according to an industry report, likely in conjunction with TSMC's 3-nanometer process for the base die .
With both companies now sampling their 12-layer HBM4E products, a direct comparison of their claimed specifications highlights a clear competitive dynamic. Samsung was first to ship, but SK hynix’s initial official specs claim an edge in several key performance metrics .
A critical differentiator is base pin speed. SK hynix’s HBM4E operates natively at 16 Gbps, while Samsung’s initial specification is 14 Gbps, with a stated capability to scale to 16 Gbps . Similarly, SK hynix claims a 20%+ power efficiency improvement, compared to a 16% gain for Samsung's HBM4E
. The measurable 17% reduction in heat resistance via Advanced MR-MUF could be a major factor for hyperscale customers packing these modules tightly into AI server racks.
The HBM4E sample shipments are the latest chapter in a multi-year struggle to supply Nvidia, the world’s most valuable AI chip designer.
With samples in the hands of major customers—which typically include Nvidia, AMD, and large cloud service providers—the critical qualification process is underway . Customers will rigorously test the memory for signal integrity, thermal behavior, and compatibility with their accelerator designs. Success in this stage will determine final purchase orders and volume ramps for AI systems expected to debut in the 2027 timeframe.
SK hynix’s ability to deliver its HBM4E samples ahead of its original second-half 2026 guidance demonstrates its intent to not just defend its market lead, but to set the pace for the entire industry . The battle is no longer just about who can ship first, but whose technology can deliver the most performance-per-watt in the most stable package—directly fueling the next leap in AI capabilities.
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