Samsung introduced V10 BV-NAND (Bonding V-NAND), the industry's first NAND flash built with wafer bonding technology, separating the memory array from peripheral logic and bonding the wafers together .
SK hynix (along with SanDisk) released the first open technical specification for High Bandwidth Flash (HBF) through the Open Compute Project (OCP) at FMS 2026 .
Across keynotes and panels, a strong industry consensus emerged that HBM on its own cannot meet AI's growing demands. Multiple presenters argued that hierarchical memory structures — combining HBM, HBF-class flash, CXL-attached memory, and NVMe storage in a tiered architecture — will be central to future AI infrastructure . Marvell's presentations, for instance, explicitly focused on agentic AI inference infrastructure requiring a diversified memory and storage portfolio beyond just HBM
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Two claims from the original question — that Nvidia predicted AI agents would exceed the global population and shift memory pricing to cost-per-I/O, and that Samsung, SK hynix, and Micron have sold out their entire 2027 DRAM and HBM production with customers receiving only 60-70% of requested volumes — could not be confirmed through any of the available published sources from FMS 2026. These statements may have been made in a keynote or panel that has not been captured in indexed reports.